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Same model may have multiple batches, images only for reference.
IXTP32N65XM Real Image
Same model may have multiple batches, images only for reference.

IXTP32N65XM

Part No IXTP32N65XM
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 14A TO220-3 / N-Channel 650 V 14A (Tc) 78W (Tc) Through Hole TO-220-3
Datasheet
IXTP32N65XM Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2206 pF @ 25 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Base Product Number IXTP32
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1324552-IXTP32N65XM
Ultra Librarian 3D Model Ultra Librarian IXTP32N65XM CAD Model

Description

The IXYS 1138196 is an N-channel MOSFET transistor with a drain-source voltage (Vdss) of 650V.

  • Continuous Drain (Id) @ 25°C: 14A (Tc)
  • Package: TO-220-3
  • Mounting: Through Hole
  • Rds On (max) @ Id, Vgs: 135mOhm @ 16A, 10V
  • Vgs(th) (max) @ Id: 5.5V @ 250μA
  • Power Dissipation (max): 78W (Tc)
  • Gate Charge (Qg) (max) @ Vgs: 54 nC @ 10 V
  • Input Capacitance (Ciss) (max) @ Vds: 2206 pF @ 25 V
  • Vgs (max): ±30V
  • Temperature Range - Operating: -55°C to 150°C (TJ)
  • Manufacturer: IXYS

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Quantity Unit Price Ext. Price
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18+ $6.4896 $116.8128
28+ $6.2868 $176.0304
38+ $6.0840 $231.1920
50+ $5.8812 $294.0600
66+ $5.2728 $348.0048
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