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Same model may have multiple batches, images only for reference.
IXTP4N80P Real Image
Same model may have multiple batches, images only for reference.

IXTP4N80P

Part No IXTP4N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3.6A TO220AB  /  N-Channel 800 V 3.6A (Tc) 100W (Tc) Through Hole TO-220-3
Datasheet
IXTP4N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number IXTP4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1066202-IXTP4N80P
Ultra Librarian 3D Model Ultra Librarian IXTP4N80P CAD Model

Description

The IXTP4N80P is an N-channel MOSFET transistor from the Polar series manufactured by IXYS.

  • Drain to Source Voltage (Vdss): 800 V
  • Continuous Drain Current (Id) @ 25°C: 3.6A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
  • Power Dissipation: 100W (Tc)
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Package: TO-220-3

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