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Same model may have multiple batches, images only for reference.
IXTP62N15P Real Image
Same model may have multiple batches, images only for reference.

IXTP62N15P

Part No IXTP62N15P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 62A TO-220
Datasheet
IXTP62N15P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 31A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049898-IXTP62N15P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP62N15P CAD Model

Description

The IXYS MOSFET is a powerful and reliable transistor that is perfect for use in a wide range of electronic devices.

  • Maximum Power Dissipation: 350W
  • Maximum Drain-Source Breakdown Voltage: 150V
  • Mounting: through-hole
  • Case/Package: TO-220AB
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.8904 $54.4520
12+ $8.9357 $107.2284
18+ $8.6565 $155.8170
24+ $8.3773 $201.0552
31+ $8.0980 $251.0380
42+ $7.2603 $304.9326
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 550 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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