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Same model may have multiple batches, images only for reference.
IXTP76P10T Real Image
Same model may have multiple batches, images only for reference.

IXTP76P10T

Part No IXTP76P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchP Power MOSFETs
Datasheet
IXTP76P10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchP
Packaging Tube
Channel Type Type P
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 197nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 13700pF @ 25V
Vgs (Maximum) ±15V
Power Dissipation (Maximum) 298W (Tc)
Rds On (Maximum) @ Id, Vgs 25 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191289-IXTP76P10T
Manufacturer Homepage www.ixys.com
Family Name IXTP76P10T
Introduction Date August 18, 2008
ECCN EAR99
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP76P10T CAD Model

Description

The IXTP76P10T is a P-channel MOSFET from IXYS.

  • Type: P-channel MOSFET
  • Manufacturer: IXYS
  • Series: TrenchP
  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 76A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 197nC @ 10V
  • Maximum Input Capacitance: 13700pF @ 25V
  • Maximum Rds On: 25 mOhm @ 500mA, 10V
  • Package: TO-220-3
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.5193 $55.1930
23+ $4.5287 $104.1601
35+ $4.3872 $153.5520
48+ $4.2457 $203.7936
61+ $4.1041 $250.3501
82+ $3.6796 $301.7272
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