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IXTP90N055T

Part No IXTP90N055T
Manufacturer IXYS
Catalog FETs - Single
Description MOSFET N-CH 55V 90A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 90A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 8.8mOhm at 25A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 50μA
Gate Charge (Qg) (Maximum) at Vgs 61nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2500pF at 25V
Power Dissipation (Maximum) 176W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 724175-IXTP90N055T
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP90N055T CAD Model

Description

The IXYS MOSFET is a high quality electronic component designed for use in a variety of applications.

  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 55V
  • Id - Continuous Drain Current: 90A
  • Maximum On-State Resistance: 8.8mOhm @ 25A and 10V
  • Gate Charge: 61nC @ 10V
  • Package: TO-220AB
  • Mounting: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3052 $58.7340
110+ $1.0707 $117.7770
170+ $1.0372 $176.3240
235+ $1.0037 $235.8695
300+ $0.9702 $291.0600
400+ $0.8697 $347.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 45,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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