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IXTQ130N15T

Part No IXTQ130N15T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 130A TO-3P
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 113nC @ 10V
Max Input Capacitance 9800pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 750W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 65A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049912-IXTQ130N15T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ130N15T CAD Model

Description

The IXTQ130N15T is a Power MOSFET from IXYS, designed for high-efficiency switching applications. This N-channel MOSFET is known for its robust design, high current handling capability, and fast switching speed. It is suitable for a variety of power conversion and control applications.

Applications:

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • DC-DC Converters
  • Inverters

Features:

  • Avalanche Rated
  • Fast Intrinsic Diode
  • Low Gate Charge (Qg)
  • High Current Handling Capability
  • RoHS Compliant

Benefits:

  • Improved System Efficiency
  • Enhanced Reliability
  • Simplified Thermal Management
  • Reduced Component Count
  • Optimized for High-Frequency Switching

Additional Details:

The IXTQ130N15T offers a drain-source voltage (Vdss) rating of 150V and a continuous drain current (Id) rating of 130A, making it suitable for high-power applications. Its low on-resistance (Rds(on)) minimizes conduction losses, contributing to higher efficiency. The fast intrinsic diode enables efficient operation in applications requiring freewheeling or synchronous rectification.

The avalanche rating of this MOSFET ensures that it can withstand transient voltage spikes without damage, enhancing its robustness and reliability. The low gate charge reduces switching losses, allowing for higher switching frequencies and improved overall system performance. This MOSFET is typically packaged in a TO-247 package, which provides excellent thermal performance.

Proper thermal management is crucial for maximizing the performance and lifespan of the IXTQ130N15T. A suitable heatsink should be used to dissipate heat generated during operation. The device is designed to operate over a wide temperature range, but exceeding the maximum junction temperature can lead to premature failure.

In summary, the IXTQ130N15T from IXYS is a high-performance Power MOSFET that offers excellent efficiency, reliability, and switching speed. It is well-suited for a wide range of power conversion and control applications.

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