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Same model may have multiple batches, images only for reference.
IXTQ22N50P Real Image
Same model may have multiple batches, images only for reference.

IXTQ22N50P

Part No IXTQ22N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 22A TO-3P
Datasheet
IXTQ22N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 2630pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 350W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049925-IXTQ22N50P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTQ22N50P CAD Model

Description

The IXTQ22N50P is an N-channel MOSFET from IXYS.

  • Maximum Power Dissipation: 350W (Tc)
  • Maximum Continuous Drain Current: 22A (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 270 mOhm @ 11A, 10V
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Mounting Type: through-hole
  • Package: TO-3P-3, SC-65-3
  • Suitable for: use in Discrete Semiconductor Products
  • Drive Voltage: 10V
  • Market Availability: in the open market

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Quantity Unit Price Ext. Price
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42+ $2.7593 $115.8906
65+ $2.6727 $173.7255
90+ $2.5860 $232.7400
116+ $2.5006 $290.0696
155+ $2.2419 $347.4945
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Availability: 21,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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