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Same model may have multiple batches, images only for reference.
IXTQ230N085T Real Image
Same model may have multiple batches, images only for reference.

IXTQ230N085T

Part No IXTQ230N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 230A TO3P / N-Channel 85 V 230A (Tc) 550W (Tc) Through Hole TO-3P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85 V
Current - Continuous Drain (Id) @ 25°C 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 187 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V
Power Dissipation (Max) 550W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ230
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346748-IXTQ230N085T
Ultra Librarian 3D Model Ultra Librarian IXTQ230N085T CAD Model

Description

The IXYS 1346748-IXTQ230N085T is an N-channel MOSFET transistor that is part of the TrenchMV™ series.

  • Drain to Source Voltage (Vdss): 85V
  • Continuous Drain Current (Id): 230A @ 25°C
  • Maximum Power Dissipation: 550W (Tc)
  • Mounting Type: Through-Hole
  • Package: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum On Resistance: 4.4mOhm @ 50A and 10Vgs
  • Gate Charge (Qg): 187 nC @ 10Vgs
  • Features: Reliable and efficient
  • Suitable for: Variety of applications

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