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Same model may have multiple batches, images only for reference.
IXTQ48N20T Real Image
Same model may have multiple batches, images only for reference.

IXTQ48N20T

Part No IXTQ48N20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 48A TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 3090pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049936-IXTQ48N20T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ48N20T CAD Model

Description

The IXYS IXTQ48N20T is a power MOSFET with a maximum power dissipation of 250W (Tc).

  • Manufacturer: IXYS
  • Maximum Power Dissipation: 250W (Tc)
  • Product Type: Discrete Semiconductor
  • Channel Polarity: N-channel
  • Mounting Style: Through-hole
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 48A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 60nC @ 10V
  • Maximum Input Capacitance: 3090pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Ideal for: Power supplies, motor control, and lighting applications

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