The IXTQ60N10T is a N-Channel MOSFET transistor from the Trench series by IXYS.

• Package: TO-3P-3, SC-65-3 package
• Mounting: designed for through-hole mounting.
• Drain-to-source voltage (Vdss): 100 V
• Continuous drain current (Id): 60A @ 25°C
• On-state resistance (Rds On): 18mOhm @ 25A and 10V gate-to-source voltage (Vgs).
• Gate threshold voltage (Vgs(th)): 4.5V @ 50µA
• Maximum power dissipation: 176W
• Suitable for: high-power applications.
• Gate charge (Qg): 49nC @ 10V
• Input capacitance (Ciss): 2650pF @ 25V
• Operating temperature range: -55°C to 175°C
• REACH: unaffected
• Active product: manufactured by IXYS, a trusted brand in the electronic components industry.