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IXTQ76N25T

Part No IXTQ76N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 76A TO-3P
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 39 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049945-IXTQ76N25T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ76N25T CAD Model

Description

The IXYS 1049945-IXTQ76N25T is an N-channel MOSFET that has a power dissipation of 460W (Tc).

  • Power Dissipation: 460W (Tc)
  • Packaging: Tube/Rail
  • Mounting Type: Through-Hole
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 250V
  • Continuous Drain Current: 76A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 1mA
  • Maximum Gate Charge: 92nC @ 10V
  • Maximum Input Capacitance: 4500pF @ 25V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: TO-3P

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9423 $50.0191
42+ $2.4142 $101.3964
65+ $2.3387 $152.0155
89+ $2.2633 $201.4337
115+ $2.1879 $251.6085
153+ $1.9615 $300.1095
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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