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Same model may have multiple batches, images only for reference.
IXTQ88N30P Real Image
Same model may have multiple batches, images only for reference.

IXTQ88N30P

Part No IXTQ88N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 88A TO-3P
Datasheet
IXTQ88N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 88A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 6300pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600W (Tc)
Maximum Rds On at Id,Vgs 40 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049949-IXTQ88N30P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ88N30P CAD Model

Description

The IXYS MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 300V and a continuous drain current of 88A at 25°C.

  • Maximum Power Dissipation: 600W (Tc)
  • Maximum Rds On: 40 mOhm @ 44A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 180nC @ 10V
  • Maximum Input Capacitance: 6300pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Case/Package: TO-3P-3, SC-65-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.2340 $62.3400
20+ $5.8317 $116.6340
31+ $5.6306 $174.5486
45+ $5.2285 $235.2825
58+ $5.0274 $291.5892
72+ $4.8263 $347.4936
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,300 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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