R6015ENX

Part No R6015ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091365-R6015ENX
Popularity Medium
Supply and Demand Status Balance

Description

The R6015ENX is an N-Channel MOSFET electronic component manufactured by Rohm Semiconductor. The component is designed for use in electronic circuits and has a manufacturer homepage of www.rohm.com. It has a maximum power dissipation of 40W (Tc) and a continuous drain current of 15A (Tc). The component is designed for use in various applications and has a maximum gate-source voltage of ±20V.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
60+ $0.8803 $52.8180
125+ $0.8236 $102.9500
190+ $0.7952 $151.0880
275+ $0.7384 $203.0600
355+ $0.7100 $252.0500
445+ $0.6816 $303.3120
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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