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Same model may have multiple batches, images only for reference.
R6015ENX Real Image
Same model may have multiple batches, images only for reference.

R6015ENX

Part No R6015ENX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 15A TO220
Datasheet
R6015ENX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 290 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091365-R6015ENX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6015ENX CAD Model

Description

The R6015ENX is an N-Channel MOSFET electronic component manufactured by Rohm Semiconductor.

  • Manufacturer Homepage: www.rohm.com
  • Maximum Power Dissipation: 40W (Tc)
  • Continuous Drain Current: 15A (Tc)
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0168 $61.0080
125+ $0.9513 $118.9125
190+ $0.9185 $174.5150
275+ $0.8529 $234.5475
355+ $0.8201 $291.1355
445+ $0.7872 $350.3040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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