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Same model may have multiple batches, images only for reference.
IXTR120P20T Real Image
Same model may have multiple batches, images only for reference.

IXTR120P20T

Part No IXTR120P20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 90A ISOPLUS247 / P-Channel 200 V 90A (Tc) 595W (Tc) Through Hole ISOPLUS247™
Datasheet
IXTR120P20T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 73000 pF @ 25 V
Power Dissipation (Max) 595W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXTR120
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1340743-IXTR120P20T
Ultra Librarian 3D Model Ultra Librarian IXTR120P20T CAD Model

Description

The IXTR120P20T is a P-channel MOSFET transistor from IXYS.

  • Drain to Source Voltage: 200V
  • Continuous Drain Current: 90A @ 25°C
  • Package: TO-247-3
  • Mounting Type: Through Hole
  • Gate Source Voltage: ±15V
  • Gate Source Threshold Voltage: 4.5V @ 250μA
  • Series: TrenchP™
  • Power Dissipation: 595W @ Tc
  • ECCN: EAR99
  • REACH: Unaffected

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