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Same model may have multiple batches, images only for reference.
IXTT2N170D2 Real Image
Same model may have multiple batches, images only for reference.

IXTT2N170D2

Part No IXTT2N170D2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1700V 2A TO268 / N-Channel 1700 V 2A (Tj) 568W (Tc) Surface Mount TO-268AA
Datasheet
IXTT2N170D2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Depletion
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 2A (Tj)
Rds On (Max) @ Id, Vgs 6.5Ohm @ 1A, 0V
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 25 V
FET Feature Depletion Mode
Power Dissipation (Max) 568W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT2
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1339975-IXTT2N170D2
Ultra Librarian 3D Model Ultra Librarian IXTT2N170D2 CAD Model

Description

The IXTT2N170D2 is an N-channel depletion mode MOSFET transistor with a drain to source voltage of 1700V and a maximum power dissipation of 568W.

  • Channel Type: N-channel
  • Mode: Depletion
  • Drain to Source Voltage: 1700V
  • Maximum Power Dissipation: 568W
  • Mounting Type: Surface mounting
  • Package: TO-268-3, D²Pak
  • Operating Temperature: -55°C to 150°C
  • Ideal for: High voltage power switching applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $62.7815 $62.7815
2+ $51.5130 $103.0260
4+ $49.9032 $199.6128
5+ $48.2934 $241.4670
6+ $46.6837 $280.1022
8+ $41.8543 $334.8344
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