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Same model may have multiple batches, images only for reference.
IXTT80N20L Real Image
Same model may have multiple batches, images only for reference.

IXTT80N20L

Part No IXTT80N20L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 80A TO268 / N-Channel 200 V 80A (Tc) 520W (Tc) Surface Mount TO-268AA
Datasheet
IXTT80N20L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 32mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6160 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT80
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346751-IXTT80N20L
Ultra Librarian 3D Model Ultra Librarian IXTT80N20L CAD Model

Description

The IXTT80N20L is an N-channel MOSFET transistor belonging to the Linear series by IXYS.

  • Package: TO-268AA
  • Drain-to-Source Voltage: 200 V
  • Power Dissipation: 520W (Tc)
  • Continuous Drain Current: 80A (Tc)
  • Gate Charge: 180 nC @ 10 V
  • Input Capacitance: 6160 pF @ 25 V
  • Low On-Resistance: 32mOhm @ 40A, 10V
  • Suitable for: power supplies, motor control, and inverter circuits

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2+ $38.1044 $76.2088
4+ $31.2651 $125.0604
5+ $30.2881 $151.4405
7+ $29.3110 $205.1770
9+ $28.3340 $255.0060
12+ $25.4029 $304.8348
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