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Same model may have multiple batches, images only for reference.
IXTU01N100D Real Image
Same model may have multiple batches, images only for reference.

IXTU01N100D

Part No IXTU01N100D
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 0.1A TO-251
Datasheet
IXTU01N100D Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 0V
Gate-Source Threshold Voltage 5V @ 25μA
Max Input Capacitance 120pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 80 Ohm @ 50mA, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1049959-IXTU01N100D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTU01N100D CAD Model

Description

The IXTU01N100D is a depletion mode N-Channel MOSFET manufactured by IXYS.

  • Win Source Part Number: 1049959
  • Category: Discrete Semiconductor Product
  • Popularity: medium
  • Supply and Demand Status: balance
  • Power Dissipation: 1.1W (Ta) and 25W (Tc)
  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 100mA (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 25μA
  • Input Capacitance: 120pF @ 25V
  • Gate-Source Voltage: ±20V (Max)
  • Rds On: 80 Ohm @ 50mA, 0V
  • Mounting Type: Through-Hole
  • Technology: MOSFET
  • Package: TO-251

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25+ $4.1533 $103.8325
38+ $4.0235 $152.8930
52+ $3.8937 $202.4724
67+ $3.7640 $252.1880
89+ $3.3746 $300.3394
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Availability: 2,900 pieces
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