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Same model may have multiple batches, images only for reference.
IXTU05N100 Real Image
Same model may have multiple batches, images only for reference.

IXTU05N100

Part No IXTU05N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 750MA TO-251
Datasheet
IXTU05N100 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 7.8nC @ 10V
Max Input Capacitance 260pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 17 Ohm @ 375mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1049960-IXTU05N100
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IXTU05N100 CAD Model

Description

The IXYS IXTU05N100 is an active electronic component that belongs to the MOSFET technology category.

  • Product: MOSFET
  • Manufacturer: IXYS
  • Mounting Type: Through-Hole
  • Polarity: N-Channel
  • Power Dissipation: 40W (Tc)
  • Drain-Source Breakdown Voltage: 1000V
  • Maximum Rds On @ Id, Vgs: 17 Ohm @ 375mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.1335 $64.0050
70+ $1.7507 $122.5490
105+ $1.6959 $178.0695
145+ $1.6413 $237.9885
185+ $1.5865 $293.5025
245+ $1.4224 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,200 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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