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Same model may have multiple batches, images only for reference.
IXTU4N70X2 Real Image
Same model may have multiple batches, images only for reference.

IXTU4N70X2

Part No IXTU4N70X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 4A TO251 / N-Channel 700 V 4A (Tc) 80W (Tc) Through Hole TO-251-3
Datasheet
IXTU4N70X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 386 pF @ 25 V
Power Dissipation (Max) 80W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251-3
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number IXTU4
Standard Package 70
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346882-IXTU4N70X2
Ultra Librarian 3D Model Ultra Librarian IXTU4N70X2 CAD Model

Description

The IXTU4N70X2 is an N-channel MOSFET transistor from IXYS.

  • Series: Ultra X2
  • Package: TO-251-3
  • Drain to Source Voltage: 700V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Power Dissipation: 80W
  • Mounting Type: Through-Hole
  • Gate Charge: 11.8 nC @ 10V
  • Input Capacitance: 386 pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3108 $59.5944
43+ $2.7166 $116.8138
66+ $2.6317 $173.6922
91+ $2.5468 $231.7588
118+ $2.4619 $290.5042
157+ $2.2072 $346.5304
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Availability: 136 pieces
In Stock: 68 pieces Factory Stock: 68 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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