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Same model may have multiple batches, images only for reference.
IXTV26N50P Real Image
Same model may have multiple batches, images only for reference.

IXTV26N50P

Part No IXTV26N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 26A PLUS220 / N-Channel 500 V 26A (Tc) 460W (Tc) Through Hole PLUS220
Datasheet
IXTV26N50P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
Power Dissipation (Max) 460W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV26
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346804-IXTV26N50P
Ultra Librarian 3D Model Ultra Librarian IXTV26N50P CAD Model

Description

The IXTV26N50P is an N-channel MOSFET transistor from the PolarHV series, designed for use in discrete semiconductor products such as FETs and MOSFETs.

  • Drain-to-Source Voltage: 500V
  • Power Dissipation: 460W
  • Mounting Type: Through-Hole
  • Package: TO-220-3, Short Tab
  • Operating Temperature: -55°C to 150°C
  • Continuous Drain Current (Id): 26A (Tc)
  • Maximum Rds On: 230mOhm @ 13A, 10V
  • Gate Charge: 65 nC @ 10 V
  • Input Capacitance: 3600 pF @ 25 V

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