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Same model may have multiple batches, images only for reference.
IXTC200N10T Real Image
Same model may have multiple batches, images only for reference.

IXTC200N10T

Part No IXTC200N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 101A ISOPLUS220 / N-Channel 100 V 101A (Tc) 160W (Tc) Through Hole ISOPLUS220™
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchMV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 101A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V
Power Dissipation (Max) 160W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS220™
Package / Case ISOPLUS220™
Base Product Number IXTC200
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346738-IXTC200N10T
Ultra Librarian 3D Model Ultra Librarian IXTC200N10T CAD Model

Description

The IXYS IXTC200N10T is a discrete semiconductor product that belongs to the FETs, MOSFETs - Single FETs, MOSFETs category.

  • Series: TrenchMV™
  • Package: ISOPLUS220™
  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 100V

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