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Same model may have multiple batches, images only for reference.
IXTV96N25T Real Image
Same model may have multiple batches, images only for reference.

IXTV96N25T

Part No IXTV96N25T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 96A PLUS220 / N-Channel 250 V 96A (Tc) 625W (Tc) Through Hole PLUS220
Datasheet
IXTV96N25T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Trench
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V
Power Dissipation (Max) 625W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV96
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346662-IXTV96N25T
Ultra Librarian 3D Model Ultra Librarian IXTV96N25T CAD Model

Description

The IXTV96N25T is an N-channel MOSFET transistor that is designed to be used in discrete semiconductor products.

  • FET Type: Single FET
  • Series: Trench
  • Drain to Source Voltage (Vdss): 250 V
  • Power Dissipation (Max): 625W (Tc)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3, Short Tab
  • Vgs (Max): ±30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Input Capacitance (Ciss) (Max) @ 25 V: 6100 pF @ 25 V
  • Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V

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