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Same model may have multiple batches, images only for reference.
IXTX20N150 Real Image
Same model may have multiple batches, images only for reference.

IXTX20N150

Part No IXTX20N150
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description High Voltage Power MOSFET Extended FBSOA
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1500V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 215nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 1250W (Tc)
Rds On (Maximum) @ Id, Vgs 1 Ohm @ 10A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PLUS247-3
Package TO-247-3
Win Source Part Number 1191303-IXTX20N150
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTX20N150
Introduction Date November 15, 2012
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IXTX20N150 CAD Model

Description

The IXYS IXTX20N150 is a N-channel MOSFET designed for high-voltage applications. This MOSFET features a drain-source voltage of 1500V and a continuous drain current of 20A (Tc). The IXYS IXTX20N150 is a popular MOSFET and is widely used in power electronics applications. This MOSFET is limited in supply and is sold in small quantities.

  • Drain-Source Voltage: 1500V
  • Continuous Drain Current: 20A (Tc)
  • Gate Charge: 215nC @ 10V
  • Input Capacitance: 7800pF @ 25V
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $52.8839 $52.8839
3+ $43.3919 $130.1757
4+ $42.0359 $168.1436
5+ $40.6799 $203.3995
7+ $39.3239 $275.2673
9+ $35.2560 $317.3040
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