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IXTX3N250L

Part No IXTX3N250L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 2500V 3A PLUS247-3 / N-Channel 2500 V 3A (Tc) 417W (Tc) Through Hole PLUS247™-3
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Rohs State rohs
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 10Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V
Power Dissipation (Max) 417W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3
Package / Case TO-247-3 Variant
Base Product Number IXTX3
Standard Package 30
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346877-IXTX3N250L
Ultra Librarian 3D Model Ultra Librarian IXTX3N250L CAD Model

Description

The IXTX3N250L N-channel MOSFET transistor by IXYS is part of the Linear series. It has a through-hole mounting type and a TO-247-3 variant package/case.

  • Series: Linear
  • Mounting Type: Through-Hole
  • Package/Case: TO-247-3
  • Drain to Source Voltage (Vdss): 2500 V
  • Power Dissipation (max): 417W (Tc)
  • Drive Voltage: 10V
  • Current Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Compliance: EAR99

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