IXTX550N055T2 is a N-channel MOSFET from IXYS.

• Series: TrenchT2™
• Package: Tube
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Power Dissipation (max): 1250W (Tc)
• Mounting: Through-Hole
• Package/Case: TO-247-3 Variant
• Supplier Device Package: PLUS247™-3
• Vgs (Max): ±20V
• Operating Temperature Range: -55°C ~ 175°C (TJ)
• Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
• Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250μA
• Gate Charge (Qg) (Max) @ Vgs: 595 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 40000 pF @ 25 V
• Ideal Choice for: Use in various electronic devices and applications