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Same model may have multiple batches, images only for reference.
IXTY44N10T Real Image
Same model may have multiple batches, images only for reference.

IXTY44N10T

Part No IXTY44N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A TO-252
Datasheet
IXTY44N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 25μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1262pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049979-IXTY44N10T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTY44N10T CAD Model

Description

The IXYS IXTP44N10T is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 100V.

  • Power Dissipation: 130W
  • Continuous Drain Current: 44A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 25μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 30 mOhm @ 22A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Mounting Type: SMD (SMT)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8262 $54.7860
70+ $1.4985 $104.8950
105+ $1.4516 $152.4180
145+ $1.4048 $203.6960
185+ $1.3580 $251.2300
250+ $1.2175 $304.3750
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