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IXTY8N65X2

Name: IXTY8N65X2
Brand: IXYS
SKU: 1346710
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTY8N65X2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 650V 8A TO252 / N-Channel 650 V 8A (Tc) 150W (Tc) Surface Mount TO-252AA
Datasheet	IXTY8N65X2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Ultra X2
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Power Dissipation (Max)	150W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab) , SC-63
Base Product Number	IXTY8
Standard Package	70
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346710-IXTY8N65X2
Ultra Librarian 3D Model	Ultra Librarian IXTY8N65X2 CAD Model

Alternative Products

Description

The IXYS IXTY8N65X2 is an N-channel MOSFET transistor designed for use in high-power applications.

Maximum Drain to Source Voltage: 650V
Continuous Drain Current: 8A
Maximum on-resistance: 500mOhm @ 4A and 10V
Maximum Gate Charge: 12nC @ 10V
Package: TO-252-3, DPak case
Compliance: RoHS3
Ideal for: applications where high power and efficiency are required

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