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Same model may have multiple batches, images only for reference.
IXXH40N65B4H1 Real Image
Same model may have multiple batches, images only for reference.

IXXH40N65B4H1

Part No IXXH40N65B4H1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 650V 120A 455W TO247AD
Datasheet
IXXH40N65B4H1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series GenX4™, XPT™
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 120 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
Power - Max 455 W
Switching Energy 1.4mJ (on), 560µJ (off)
Input Type Standard
Gate Charge 77 nC
Td (on/off) @ 25°C 28ns/144ns
Test Condition 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 120 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-2
Supplier Device Package TO-247AD
Base Product Number IXXH40
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 876153-IXXH40N65B4H1
Ultra Librarian 3D Model Ultra Librarian IXXH40N65B4H1 CAD Model

Description

The IXXH40N65B4H1 is a single IGBT transistor from the GenX4™ and XPT™ series by IXYS.

  • Manufacturer: IXYS
  • Product Name: IXXH40N65B4H1
  • Series: GenX4™ and XPT™
  • Maximum Power: 455 W
  • Reverse Recovery Time (trr): 120 ns
  • Collector-Emitter Breakdown Voltage: 650 V
  • Maximum Collector Current: 120 A
  • Vce(on): 2V @ 15V gate-emitter voltage and 40A collector current
  • Switching Energy (Turn-On): 1.4mJ
  • Switching Energy (Turn-Off): 560μJ
  • Gate Charge: 77 nC
  • On Delay Time: 28ns
  • Off Delay Time: 144ns
  • Mounting Type: Through-hole
  • Package: TO-247-2
  • Operating Temperature Range: -55°C to 175°C
  • REACH Compliance: Compliant
  • Availability: Active

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