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Same model may have multiple batches, images only for reference.
IXYH50N120C3D1 Real Image
Same model may have multiple batches, images only for reference.

IXYH50N120C3D1

Part No IXYH50N120C3D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 1200V 90A 625W TO247 / IGBT 1200 V 90 A 625 W Through Hole TO-247 (IXTH)
Datasheet
IXYH50N120C3D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series GenX3™, XPT™
Package Tube
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 210 A
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 50A
Power - Max 625 W
Switching Energy 3mJ (on) , 1mJ (off)
Input Type Standard
Gate Charge 142 nC
Td (on/off) @ 25°C 28ns/133ns
Test Condition 600V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr) 195 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 (IXTH)
Base Product Number IXYH50
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1338387-IXYH50N120C3D1
Ultra Librarian 3D Model Ultra Librarian IXYH50N120C3D1 CAD Model

Description

The IXYH50N120C3D1 single IGBT transistor by IXYS is part of the GenX3™ and XPT™ series.

  • Manufacturer: IXYS
  • Product: IXYH50N120C3D1
  • Type: Single IGBT transistor
  • Series: GenX3™ and XPT™
  • Mounting Type: Through-hole
  • Package/Case: TO-247-3
  • Power Max: 625 W
  • Reverse Recovery Time (trr): 195 ns
  • Voltage Collector Emitter Breakdown (Max): 1200 V
  • Current Collector Pulsed (Icm): 210 A
  • Switching Energy (On): 3mJ
  • Switching Energy (Off): 1mJ
  • Gate Charge: 142 nC
  • Test Condition: 600V, 50A, 5Ohm, 15V
  • Temperature Range: -55°C to 150°C (TJ)
  • Compliance: EAR99 compliant
  • Supplier Device Package: TO-247 (IXTH)

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