The BC848-C-RTK/P is a general-purpose NPN bipolar junction transistor (BJT) manufactured by KEC. It is designed for use in a wide variety of switching and amplification applications. This transistor is commonly used in consumer electronics, industrial automation, and signal processing circuits.

Applications:

• General purpose amplification
• Switching circuits
• Signal processing
• Consumer electronics (e.g., audio amplifiers, remote controls)
• Industrial automation (e.g., sensor interfaces, control circuits)

Features:

• NPN Bipolar Junction Transistor (BJT)
• Collector-Emitter Voltage (VCEO): 30V
• Collector Current (IC): 200mA
• High current gain (hFE), typically between 420 and 800
• Low collector-emitter saturation voltage
• RoHS Compliant
• Surface Mount Device (SMD) package

Benefits:

• Provides reliable amplification and switching performance.
• Suitable for a broad range of applications due to its versatile characteristics.
• Small surface mount package allows for compact circuit designs.
• High current gain enables efficient signal amplification.
• RoHS compliance ensures environmental friendliness.

Technical Specifications:

The BC848-C-RTK/P transistor features a collector-emitter voltage (VCEO) of 30V, a collector-base voltage (VCBO) of 50V, and an emitter-base voltage (VEBO) of 5V. The continuous collector current (IC) is rated at 200mA. The transistor has a power dissipation of 250mW. The operating and storage junction temperature range is -65°C to +150°C.

The 'C' in the part number indicates a specific hFE (current gain) range. The RTK/P indicates the specific packaging and reel type.