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MGSF2N02ELT1

Part No MGSF2N02ELT1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2.8A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 3.5nC @ 4V
Max Input Capacitance 150pF @ 5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 058492-MGSF2N02ELT1
Ultra Librarian 3D Model Ultra Librarian MGSF2N02ELT1 CAD Model

Description

Product Overview: MGSF2N02ELT1 from ON Semiconductor

The MGSF2N02ELT1 is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in the semiconductor industry. This MOSFET is a part of ON Semiconductor's extensive portfolio of energy-efficient devices, which are specifically engineered to meet the demanding requirements of modern electronic circuits.

With its compact SOT-23 package, the MGSF2N02ELT1 is optimized for space-constrained applications where size and power density are critical factors. This small footprint does not compromise its capability to handle significant power, making it an ideal choice for a variety of applications including power management, switching, and load driving in portable and battery-powered devices.

Key Features:

  • Low On-Resistance: The device boasts a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Drain-Source Voltage (V<sub>DSS): With a high drain-source voltage rating, the MGSF2N02ELT1 can handle higher voltage applications, offering greater flexibility in circuit design.
  • Low Threshold Voltage (V<sub>GS(th)): The low gate threshold voltage ensures that the MOSFET can be easily driven by logic-level voltages, making it compatible with a wide range of control circuits and microcontrollers.
  • Fast Switching Speed: The device is designed for fast switching, which is essential for reducing switching losses and improving performance in high-frequency applications.
  • High-Temperature Performance: Capable of operating at high temperatures, the MGSF2N02ELT1 maintains its performance even under thermal stress, ensuring reliability in harsh environments.

Applications:

The versatility of the MGSF2N02ELT1 allows it to be used in numerous applications across various industries. Its typical applications include:

  • DC/DC converters
  • Power Management Systems
  • Battery Powered Devices
  • Motor Control Circuits
  • Load Switching
  • Portable Electronic Devices

In conclusion, the MGSF2N02ELT1 from ON Semiconductor is a robust, efficient, and versatile N-channel Power MOSFET that delivers high performance in a compact package. Its low on-resistance, high voltage rating, and fast switching capabilities make it a top choice for designers seeking to enhance the performance and efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
245+ $0.2391 $58.5795
590+ $0.1963 $115.8170
915+ $0.1901 $173.9415
1,260+ $0.1840 $231.8400
1,625+ $0.1779 $289.0875
2,175+ $0.1595 $346.9125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 176,990 pieces
MOQ: 245 pcs
Order Increment : 1 pcs
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