The KGT25N120KDA is a 1200V, 25A Insulated Gate Bipolar Transistor (IGBT) from KEC. It is designed for high-voltage, high-current switching applications where efficiency and reliability are critical. This IGBT features a fast switching speed, low saturation voltage, and robust avalanche capability, making it suitable for demanding power electronic circuits.

Applications

• Industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Welding equipment
• Induction heating systems
• Power factor correction (PFC) circuits

Features

• High blocking voltage: 1200V
• High current capability: 25A
• Fast switching speed: Reduces switching losses and improves efficiency.
• Low saturation voltage (VCE(sat)): Minimizes conduction losses.
• Robust avalanche capability: Enhances reliability and withstands voltage transients.
• TO-247 package: Provides excellent thermal performance.

Benefits

• Increased energy efficiency: Reduced switching and conduction losses lead to higher efficiency in power electronic systems.
• Improved system reliability: Robust design and avalanche capability ensure stable operation under demanding conditions.
• Reduced heat sink size: Lower losses translate to less heat generation, allowing for smaller heat sinks.
• Simplified circuit design: Integrated gate resistor simplifies gate drive circuitry.
• Higher power density: Enables the design of compact and powerful power electronic equipment.

Technical Specifications

The KGT25N120KDA has a collector-emitter voltage (VCE) of 1200V and a collector current (IC) of 25A at 25°C. The gate-emitter voltage (VGE) is ±20V. The operating junction temperature ranges from -55°C to +150°C. The TO-247 package provides excellent thermal resistance, ensuring efficient heat dissipation. The device's fast switching characteristics minimize switching losses at higher frequencies.