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KHB019N20F1

Part No KHB019N20F1
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer KEC
Win Source Part Number 1192897-KHB019N20F1
Manufacturer Homepage www.keccorp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian KHB019N20F1 CAD Model

Description

The KHB019N20F1 is an N-Channel Power MOSFET from KEC (Korea Electronics Co., Ltd.). It is designed for high-efficiency switching applications, offering a combination of low on-resistance and fast switching speeds. This MOSFET is suitable for a wide range of power management and control applications.

Applications:

  • DC-DC Converters: Used in DC-DC converters for voltage regulation in various electronic devices.
  • Power Management in Portable Devices: Found in power management circuits for smartphones, tablets, and other portable electronics.
  • LED Lighting: Employed in LED lighting applications for efficient power switching.
  • Motor Control: Suitable for low-power motor control applications.

Features:

  • N-Channel MOSFET: N-channel enhancement mode for easy gate drive.
  • Low On-Resistance: Low RDS(on) minimizes conduction losses, improving efficiency.
  • Fast Switching Speed: Optimized for fast switching performance, reducing switching losses.
  • Logic-Level Gate Drive: Can be driven directly from logic-level signals, simplifying circuit design.
  • Surface Mount Package: Available in a small surface mount package for space-saving designs.

Benefits:

  • High Efficiency: Minimizes power losses, leading to cooler operation and extended battery life in portable devices.
  • Compact Design: Small footprint allows for integration into densely populated circuit boards.
  • Simplified Circuit Design: Logic-level gate drive simplifies the interface with control circuitry.

Additional Details:

The KHB019N20F1 typically features a drain-source voltage (Vds) rating of 200V and a drain current (Id) rating that depends on the specific device characteristics. Its static drain-source on-resistance RDS(on) is low, ensuring minimal voltage drop and power dissipation during conduction. The gate threshold voltage (Vgs(th)) is designed to be compatible with logic-level signals, facilitating direct control from microcontrollers or other digital devices. It is commonly available in a surface-mount package, such as a TO-252 or similar, which is ideal for high-density PCB layouts. The device's fast switching speed is beneficial in applications requiring rapid response times. The MOSFET is designed to operate within a specified temperature range, ensuring stable performance under varying environmental conditions. Furthermore, it is likely RoHS compliant, adhering to environmental regulations.

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