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KHB5D0N50F

Part No KHB5D0N50F
Manufacturer KEC
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Manufacturer KEC
Win Source Part Number 1192901-KHB5D0N50F
Manufacturer Homepage www.keccorp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian KHB5D0N50F CAD Model

Description

The KHB5D0N50F is a Power MOSFET manufactured by KEC (Korea Electronics Co., Ltd.). It's designed for high-efficiency switching applications such as DC-DC converters, power inverters, and motor control circuits. The MOSFET utilizes advanced trench technology to minimize on-state resistance (Rds(on)) and gate charge, leading to improved efficiency and reduced switching losses.

Applications

  • DC-DC Converters: Used in step-up (boost) and step-down (buck) converters for efficient power conversion.
  • Power Inverters: Employed in inverters that convert DC power to AC power.
  • Motor Control: Used in motor drive circuits for precise control of motor speed and torque.
  • Power Supplies: Found in switching power supplies for various electronic devices.
  • Lighting Ballasts: Used in electronic ballasts for fluorescent and LED lighting.

Features

  • Low On-State Resistance (Rds(on)): Minimizes power losses due to conduction, improving efficiency.
  • Fast Switching Speed: Reduces switching losses, further enhancing efficiency.
  • Low Gate Charge (Qg): Requires less energy to switch the MOSFET on and off, reducing driver power requirements.
  • Avalanche Rated: Can withstand avalanche breakdown events, enhancing reliability.
  • RoHS Compliant: Meets environmental standards for hazardous substances.

Benefits

  • High Efficiency: Low Rds(on) and fast switching speed result in high overall efficiency.
  • Reduced Heat Dissipation: Lower power losses mean less heat needs to be dissipated, simplifying thermal management.
  • Improved System Reliability: Avalanche rating enhances robustness and reliability.
  • Simplified Circuit Design: Easy to drive and requires minimal external components.
  • Compact Solution: Available in industry-standard packages.

Additional Details

The KHB5D0N50F typically operates with a drain-source voltage (Vds) of 500V and a continuous drain current (Id) rating dependent on the specific package and operating conditions. The "5D0" portion of the part number might relate to the Rds(on) value. The device is typically available in a through-hole or surface-mount package, such as TO-220 or D2PAK. Refer to the manufacturer's datasheet for detailed electrical characteristics, thermal resistance, and safe operating area (SOA) information. Proper heatsinking is often necessary to manage the MOSFET's junction temperature and ensure reliable operation.

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