The DS1245Y-120IND is a high-quality, robust nonvolatile SRAM module designed and manufactured by Maxim Integrated. This memory device offers a unique combination of volatile and nonvolatile memory functionality, ensuring data retention even after power loss. It is an ideal solution for industrial, military, and other applications where data integrity and retention are of paramount importance.

Key Features

• Memory Capacity: 1024k Memory cells organized as 131,072 words by 8 bits.
• Access Time: Fast access time of 120ns, facilitating quick read and write operations.
• Nonvolatile Technology: Incorporates an internal lithium energy source and control circuitry which ensures that data is maintained in the absence of external power.
• Industrial Temperature Range: Operates reliably across a wide temperature range from -40°C to +85°C, making it suitable for harsh environments.
• Package: Available in the industry-standard 32-pin EDIP (JEDEC) package, providing compatibility with existing system designs.
• Data Reliability: Offers unlimited read/write endurance and a data retention period of over 10 years, ensuring long-term reliability.

Applications

The DS1245Y-120IND is engineered for applications that cannot tolerate data loss due to power outages or system failures. Its rugged design and dependable nonvolatile memory make it suitable for:

• Industrial control systems
• Military and defense equipment
• Medical devices
• Telecommunications infrastructure
• Automotive electronics
• Other critical applications where data integrity is vital

Quality and Reliability

Maxim Integrated is known for their commitment to quality and the DS1245Y-120IND is no exception. Each module undergoes rigorous testing to ensure it meets the high standards expected for industrial-grade components. With its robust nonvolatile technology, this SRAM module provides both the performance and reliability needed for mission-critical systems.