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BC637-10-AP

Part No BC637-10-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description TRANS NPN TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor NPN 60 V 1 A 100MHz 830 mW Through Hole TO-92
Manufacturer Micro Commercial Co
Package Tape & Box (TB)
Part Status Obsolete
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Case / Package TO-92
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Quantity per package 2000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 912920-BC637-10-AP
Ultra Librarian 3D Model Ultra Librarian BC637-10-AP CAD Model

Description

The BC637-10-AP is a silicon PNP epitaxial planar transistor from Micro Commercial Components (MCC). It's designed for use in various general-purpose amplifier and switching applications, particularly where moderate power dissipation is required.

Applications

  • General-purpose amplification
  • Switching circuits
  • Driver stages
  • Audio amplifiers
  • Consumer electronics

Features

  • PNP Silicon Epitaxial Planar Transistor
  • Collector-Emitter Voltage (VCEO): -80V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 0.8W
  • Current Gain (hFE): 40-100
  • RoHS Compliant
  • Available in a TO-92 package

Benefits

  • Provides efficient amplification due to its high current gain.
  • Suitable for medium power applications because of its collector current rating.
  • Reliable switching performance due to defined saturation voltage.
  • Cost-effective solution for general purpose applications.
  • Easy to implement into circuit designs due to its standard TO-92 package.

Additional Details

The BC637-10-AP features a TO-92 package, which allows for easy mounting on PCBs. The transistor's absolute maximum ratings specify a Collector-Base Voltage (VCBO) of -80V, Emitter-Base Voltage (VEBO) of -5V, and an operating and storage junction temperature range from -65°C to +150°C. Its transition frequency is typically around 100 MHz. The hFE is categorized into groups, with the '-10' suffix indicating a specific gain range (40-100). It is also lead-free and RoHS compliant, aligning with modern environmental standards for electronic components.

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