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Same model may have multiple batches, images only for reference.
S9012-G-AP Real Image
Same model may have multiple batches, images only for reference.

S9012-G-AP

Part No S9012-G-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Datasheet
S9012-G-AP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce 112 @ 1mA, 4V
Power - Max 625 mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Other Names 353-S9012-G-APTB
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278660-S9012-G-AP
Ultra Librarian 3D Model Ultra Librarian S9012-G-AP CAD Model

Description

The S9012-G-AP is a bipolar transistor that belongs to the Discrete Semiconductor Products category.

  • Transistor Type: PNP
  • Package/Case: TO-226-3, TO-92-3 (TO-226AA) formed leads
  • Standard Package: 2,000
  • Power Max: 625mW
  • Voltage Collector Emitter Breakdown (max): 25V
  • Current Collector (Ic) (max): 500mA
  • Vce Saturation (max) @ Ib, Ic: 600mV @ 50mA, 500mA
  • Current Collector Cutoff (max): 200nA
  • DC Current Gain (hFE) (min) @ Ic, Vce: 112 @ 1mA, 4V
  • Frequency Transition: 150MHz
  • Mounting Type: Through-hole
  • Supplier Device Package: TO-92
  • Operating Temperature Range: from -55°C to 150°C (TJ)

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