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Same model may have multiple batches, images only for reference.
SI3415A-TP Real Image
Same model may have multiple batches, images only for reference.

SI3415A-TP

Part No SI3415A-TP
Manufacturer Micro Commercial Co
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI3415A-TP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Micro Commercial Co
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 45mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 10 V
Power Dissipation (Max) 1.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SI3415
Other Names SI3415A-TPMSCT,SI3415A-TPMSDKR,SI3415A-TPMSTR
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278251-SI3415A-TP
Ultra Librarian 3D Model Ultra Librarian SI3415A-TP CAD Model

Description

The SI3415A-TPMSCT is a P-Channel MOSFET with a drain to source voltage of 20V and a continuous drain current of 4A.

  • Package: TO-236-3, SC-59, SOT-23-3
  • Power Dissipation: 1.4W
  • Gate Charge: 12 nC @ 4.5 V
  • Input Capacitance: 950 pF @ 10 Vds
  • Vgs (Max): ±10V
  • Operating Temperature: -55°C to 150°C
  • Rds On: 45mOhm @ 4A and 4.5V
  • Applications: Transistors, FETs, and MOSFETs

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