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Same model may have multiple batches, images only for reference.
TPT5609-B-AP Real Image
Same model may have multiple batches, images only for reference.

TPT5609-B-AP

Part No TPT5609-B-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 1A TO92  /  Bipolar (BJT) Transistor NPN 20 V 1 A 190MHz 750 mW Through Hole TO-92
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max) 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA, 2V
Power - Max 750 mW
Frequency - Transition 190MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 1
Win Source Part Number 1109516-TPT5609-B-AP
Ultra Librarian 3D Model Ultra Librarian TPT5609-B-AP CAD Model

Description

The TPT5609-B-AP is an NPN bipolar transistor designed for use in low power switching applications.

  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Collector Current: 1 A
  • Package: TO-92
  • Format: Tape and Box
  • Operating Temperature Range: -55°C to 150°C

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