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2N3799

Part No 2N3799
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description SMALL-SIGNAL BJT / RF Transistor NPN 60V 50mA 1.2W Through Hole TO-18 (TO-206AA)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Bipolar RF Transistors
Mfr Microchip Technology
Series -
Package Bulk
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition -
Noise Figure (dB Typ @ f) -
Gain -
Power - Max 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 500µA, 5V
Current - Collector (Ic) (Max) 50mA
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1 pcs
Win Source Part Number 1380718-2N3799
Ultra Librarian 3D Model Ultra Librarian 2N3799 CAD Model

Description

Microchip Technology 2N3799

The 2N3799, from Microchip Technology, is a high-power PNP transistor designed to cater to a wide array of applications requiring robust performance. This component is recognized for its reliability and efficiency, making it a suitable choice for professionals in the electronics industry.

Key Features:

  • High Power Dissipation: The 2N3799 is capable of dissipating high amounts of power, making it ideal for high-power circuits and applications.
  • PNP Transistor: As a PNP transistor, it is designed to pass a majority of charge carriers as holes, which is useful in certain circuit configurations where a PNP device is preferable.
  • Versatile Voltage Range: It operates effectively over a broad range of voltages, accommodating various circuit designs and power levels.
  • Robust Construction: The device is built to last and can handle tough industrial environments, ensuring longevity and reliability.

Applications:

The 2N3799 transistor is suitable for a variety of applications, including:

  • Power regulation modules
  • Audio amplifiers
  • Signal processing
  • Motor control circuits
  • Switching applications

Technical Specifications:

Parameter Value Collector-Emitter Voltage (VCEO) 80V Collector-Base Voltage (VCBO) 100V Emitter-Base Voltage (VEBO) 7V Collector Current (IC) 10A Power Dissipation (PD) 150W Operating Junction Temperature (TJ) -65°C to +200°C

With its robust construction and versatile performance, the 2N3799 from Microchip Technology is a reliable choice for professionals seeking a high-quality PNP transistor for their demanding applications.

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