Microchip Technology's 93AA46-I/SN EEPROM

The 93AA46-I/SN is a high-quality, 1 Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) device from Microchip Technology, crafted to meet the demands of sophisticated electronic systems. This compact, serial EEPROM offers a robust storage solution for applications requiring data retention without power, efficient data management, and low-power consumption.

Key Features

• Memory Size: The device comes with a 1 Kbit (128 x 8 or 64 x 16) memory size, providing ample space for calibration data, device configuration, and ID storage.
• Interface Type: It utilizes the popular I²C (2-wire) serial interface, ensuring easy integration with a wide range of microcontrollers and processors.
• Operating Voltage: The 93AA46-I/SN operates at a voltage range of 2.5V to 5.5V, making it versatile for both 3.3V and 5V systems.
• Temperature Range: This EEPROM can operate over an industrial temperature range of -40°C to +85°C, ensuring reliability in harsh environments.
• Write Cycle Time: With a 5 ms max write cycle time, it allows for quick data updates and minimal downtime for write operations.
• Packaging: The device is available in an 8-pin SN (SOIC) package, ideal for space-constrained applications.

Applications

The 93AA46-I/SN is suitable for a variety of applications, including but not limited to:

• Industrial and automotive electronics
• Portable consumer devices
• Medical devices
• Smart cards

Reliability and Support

Microchip Technology is known for its commitment to quality and reliability, and the 93AA46-I/SN is no exception. It comes with built-in error correction and endurance of 1 million write cycles, ensuring data integrity and a long operational life. Additionally, Microchip offers comprehensive technical support and documentation, making the integration of the 93AA46-I/SN into your project seamless.

Whether you're designing a new system or upgrading an existing one, the 93AA46-I/SN EEPROM from Microchip Technology is an excellent choice for reliable and efficient non-volatile memory storage.