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AT25160B-SSPDGV-T

Part No AT25160B-SSPDGV-T
Manufacturer Microchip Technology
Catalog Memory
Description IC EEPROM 16KBIT SPI 5MHZ 8SOIC / EEPROM Memory IC 16Kbit SPI 5 MHz 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Microchip Technology
Series Automotive, AEC-Q100
Package Tape & Reel
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 16Kbit
Memory Organization 2K x 8
Memory Interface SPI
Clock Frequency 5 MHz
Write Cycle Time - Word, Page 5ms
Voltage - Supply 2.5V ~ 5.5V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number AT25160
Standard Package 4,000 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0051
Win Source Part Number 862051-AT25160B-SSPDGV-T
Ultra Librarian 3D Model Ultra Librarian AT25160B-SSPDGV-T CAD Model

Description

Microchip Technology's AT25160B-SSPDGV-T EEPROM

The AT25160B-SSPDGV-T from Microchip Technology is a high-performance, 16-Kbit Serial Electrically Erasable Programmable Read-Only Memory (EEPROM) device that is a perfect solution for applications requiring data storage that is both durable and reliable. This particular model comes in an 8-lead TSSOP (Thin Shrink Small Outline Package) and operates over the industrial temperature range.

This EEPROM device utilizes the SPI (Serial Peripheral Interface) bus, which is known for its simplicity and speed, making it a popular choice for communication between microcontrollers and peripheral devices like this EEPROM. The AT25160B-SSPDGV-T is designed with a wide voltage range, typically from 1.8V to 5.5V, which allows for flexible integration into various system designs without the need for additional voltage level conversion.

The AT25160B-SSPDGV-T features a write protect (WP) pin that provides hardware data protection. The entire memory array, or specific blocks, can be write-protected by connecting this pin to VCC. This ensures critical data remains secure and unaltered. Additionally, the device supports a high endurance of 1 million write cycles and a data retention period of 100 years, ensuring data integrity over a long period of time.

For security and data management, the EEPROM includes a 64-byte page write buffer, which allows for faster write operations by writing multiple bytes simultaneously. It also has a self-timed write cycle with auto-clear, which simplifies the write operation as the completion of the cycle is taken care of by the device itself. The status of the write cycle can be monitored through the Ready/Busy status signal, which indicates whether the device is ready for the next operation or still busy with the current one.

The AT25160B-SSPDGV-T is versatile and can be used in a wide range of applications, including but not limited to, industrial controls, medical devices, automotive systems, and consumer electronics. Its robust design and reliable data storage capabilities make it an excellent choice for designers looking to ensure the integrity and accessibility of their data.

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