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JAN2N2222AUB

Part No JAN2N2222AUB
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS NPN 50V 0.8A UB  /  Bipolar (BJT) Transistor NPN 50 V 800 mA 500 mW Surface Mount UB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/255
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting SMD (SMT)
Package / Case 3-SMD, Non-Standard
Supplier Device Package UB
Base Product Number 2N2222
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1086-2326,1086-2326-MIL
Standard Package 1
Win Source Part Number 971194-JAN2N2222AUB
Ultra Librarian 3D Model Ultra Librarian JAN2N2222AUB CAD Model

Description

The JAN2N2222AUB is a high-quality NPN bipolar transistor manufactured by Microchip Technology, designed to meet the stringent requirements of the aerospace industry. This transistor is a part of the JAN (Joint Army/Navy) series, indicating that it conforms to the military specifications and standards for reliability and performance in critical applications.

Key Features:

  • High-Speed Switching: The JAN2N2222AUB offers swift transitions between the on and off states, making it ideal for high-speed switching applications.
  • Robust Performance: It is built to withstand extreme environmental conditions, ensuring consistent performance in a wide range of temperatures and under mechanical stress.
  • Hermetically Sealed: The device is hermetically sealed, providing protection against moisture and other environmental contaminants.
  • High Power Dissipation: With a notable power dissipation capability, this transistor can handle higher amounts of power without compromising its operational integrity.
  • Reliable Construction: The construction of the JAN2N2222AUB adheres to military standards, making it a reliable component for aerospace and defense applications.

Applications:

The JAN2N2222AUB transistor is versatile and can be used in a variety of applications, including but not limited to:

  • Switching regulators
  • Power amplifiers
  • Signal processing circuits
  • Aerospace and defense electronics

Technical Specifications:

Parameter Value Collector-Emitter Voltage (VCEO) 50V Collector-Base Voltage (VCBO) 75V Emitter-Base Voltage (VEBO) 6V Collector Current (IC) 800mA Power Dissipation (PD) 500mW

For engineers and designers looking for a reliable transistor that can perform under the most demanding conditions, the JAN2N2222AUB from Microchip Technology is an excellent choice that combines durability, performance, and military-grade quality.

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