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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/466
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 50 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 5V @ 10A, 50A
Current - Collector Cutoff (Max) 5µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 25A, 2V
Power - Max 300 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3 (TO-204AA)
Base Product Number 2N5683
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1086-16167-MIL,1086-16167
Standard Package 1
Win Source Part Number 1008658-JAN2N5683
Ultra Librarian 3D Model Ultra Librarian JAN2N5683 CAD Model

Description

Microchip Technology's JAN2N5683 NPN Power Transistor

The JAN2N5683 is a high-quality NPN power transistor developed by Microchip Technology, a leader in the field of microcontroller and analog semiconductors. This component is specifically designed to cater to demanding applications that require robust performance, high reliability, and consistency. It is a preferred choice for military, aerospace, and other high-reliability industries where components must withstand extreme conditions without compromising on performance.

With its impressive specifications, the JAN2N5683 transistor is capable of handling high power applications with ease. It features a high collector-emitter voltage (VCEO) that enables it to manage significant voltage levels, while the collector current (IC) rating ensures that it can drive substantial currents without overheating or failing. This makes the JAN2N5683 suitable for power regulation circuits, switching applications, and amplifiers where high power handling is a critical requirement.

The JAN2N5683 is constructed with attention to durability and longevity. It is encapsulated in a hermetically sealed package that protects the internal semiconductor from environmental factors such as moisture, dust, and chemical contaminants. This packaging is also designed to withstand mechanical stresses and thermal cycles, further enhancing the reliability of the device in challenging environments.

One of the standout features of the JAN2N5683 is its qualification under the Joint Army-Navy (JAN) specifications, which underscores its suitability for use in military-grade equipment. The JAN specification indicates that this transistor has undergone rigorous testing to ensure it meets the stringent requirements for performance, quality, and consistency expected in critical applications.

Overall, the JAN2N5683 from Microchip Technology is an excellent choice for engineers and designers who need a reliable power transistor capable of operating in high-stress conditions. Its combination of high power handling, robust construction, and JAN qualification makes it a trusted component in circuits that simply cannot fail.

To learn more about the JAN2N5683 or to obtain datasheets and support, customers are encouraged to visit Microchip Technology's official website or contact their local sales representative.

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