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JANS2N3637UB/TR

Part No JANS2N3637UB/TR
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS PNP 175V 1A UB / Bipolar (BJT) Transistor PNP 175 V 1 A 1.5 W Surface Mount UB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/357
Package Tape & Reel (TR)
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 175 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V
Power - Max 1.5 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting SMD (SMT)
Package / Case 3-SMD, No Lead
Supplier Device Package UB
ECCN EAR99
HTSUS 8541.29.0095
Other Names 150-JANS2N3637UB/TR
Standard Package 1
Win Source Part Number 1184018-JANS2N3637UB/TR
Ultra Librarian 3D Model Ultra Librarian JANS2N3637UB/TR CAD Model

Description

Product Overview: JANS2N3637UB/TR by Microchip Technology

The JANS2N3637UB/TR is a high-reliability, military-grade transistor produced by Microchip Technology, a leading manufacturer of microcontroller, mixed-signal, analog, and Flash-IP integrated circuits. This product is specifically designed to meet the stringent requirements of aerospace and defense applications, ensuring optimal performance in extreme conditions.

Key Features

  • Quality and Reliability: The JANS2N3637UB/TR is manufactured to the highest quality standards, meeting the JANS (Joint Army-Navy Specifications) level, which is one of the highest reliability levels for electronic components used in military applications.
  • Radiation Hardened: This device is radiation-hardened, making it suitable for space applications where exposure to radiation can affect the performance and longevity of electronic components.
  • Hermetically Sealed: The transistor is encapsulated in a hermetically sealed package, ensuring protection against environmental factors such as moisture and dust, which could otherwise compromise the device's integrity and performance.
  • High-Temperature Performance: It is designed to operate effectively over a wide range of temperatures, making it an ideal choice for applications with extreme thermal environments.
  • Robust Electrical Characteristics: The JANS2N3637UB/TR offers excellent electrical characteristics that include high current handling and fast switching speeds, which are essential for critical military and aerospace operations.

Applications

The robust design and specifications of the JANS2N3637UB/TR make it an excellent choice for a variety of high-reliability applications, including:

  • Avionics and onboard aircraft systems
  • Satellite and space exploration equipment
  • Missile and weapons systems
  • Communication systems in harsh environments
  • Naval systems exposed to marine conditions

Product Specifications

The JANS2N3637UB/TR is a bipolar junction transistor (BJT) that offers superior performance with its carefully designed specifications. Its package type is designed for surface mounting, providing ease of integration into various circuit designs. As a testament to Microchip Technology's commitment to quality, this product is backed by rigorous testing and certification to ensure it meets the demanding requirements of military standards.

For engineers and designers working on mission-critical projects, the JANS2N3637UB/TR by Microchip Technology represents reliability and performance that can be trusted in the most challenging environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $102.6668 $102.6668
2+ $99.4594 $198.9188
3+ $96.2508 $288.7524
4+ $93.0422 $372.1688
5+ $83.4176 $417.0880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18 pieces
Order Increment : 1 pcs
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