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JANS2N3810U

Part No JANS2N3810U
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Arrays
Description PNP TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Microchip Technology
Series Military, MIL-PRF-19500/336
Package Bulk
Product Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 50mA
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Power - Max 350mW
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package 6-SMD
Base Product Number 2N3810
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1378721-JANS2N3810U
Ultra Librarian 3D Model Ultra Librarian JANS2N3810U CAD Model

Description

Introducing the JANS2N3810U P-Channel MOSFET from Microchip Technology

Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions, presents the JANS2N3810U, a high-reliability P-Channel MOSFET designed to meet the rigorous standards of aerospace and defense applications. This state-of-the-art component is engineered to provide efficient power management and signal processing in the most demanding environments.

Key Features of the JANS2N3810U

  • High-Performance P-Channel MOSFET: The JANS2N3810U is a P-Channel enhancement-mode MOSFET that offers excellent power switching capabilities.
  • Durable and Reliable: Built to withstand extreme conditions, the JANS2N3810U is characterized for operation from -55°C to +150°C, ensuring reliable performance in a wide range of temperatures.
  • Space-Level Quality: This device meets the stringent requirements of the JANS level of MIL-PRF-19500/562 specifications, assuring top-tier quality and performance for space applications.
  • Low On-Resistance: The low on-resistance of the JANS2N3810U minimizes power losses and improves efficiency, which is crucial for power-sensitive designs.
  • Radiation Hardened: Designed to be radiation hardened, this MOSFET can endure the high-radiation environments encountered in space missions without degradation of its electrical properties.
  • Hermetically Sealed: The device is encapsulated in a hermetically sealed package, providing protection against moisture and contaminants, which is essential for maintaining long-term reliability.

Applications

The JANS2N3810U is ideally suited for a variety of high-reliability applications, including:

  • Satellite power systems
  • Spacecraft load switching
  • Avionics and military systems
  • High-reliability power supply circuits
  • Radiation-hardened electronic equipment

Microchip Technology's commitment to excellence is embodied in the JANS2N3810U, providing engineers with a robust and dependable component that can be trusted in the most critical missions. With its combination of performance, durability, and reliability, this P-Channel MOSFET is an excellent choice for designers looking to optimize their power management solutions in aerospace and defense systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $115.6717 $115.6717
2+ $111.9403 $223.8806
3+ $108.2090 $324.6270
4+ $97.0150 $388.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10 pieces
Order Increment : 1 pcs
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