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JANS2N7372

Part No JANS2N7372
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS PNP 80V 5A TO254AA / Bipolar (BJT) Transistor PNP 80 V 5 A 4 W Through Hole TO-254AA
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Microchip Technology
Series Military, MIL-PRF-19500/612
Package Bulk
Transistor Type PNP
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2.5A, 5V
Power - Max 4 W
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package TO-254AA
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1 pcs
Win Source Part Number 1382401-JANS2N7372
Ultra Librarian 3D Model Ultra Librarian JANS2N7372 CAD Model

Description

Introducing the JANS2N7372 Power MOSFET by Microchip Technology

Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, presents the JANS2N7372 Power MOSFET, a high-reliability component designed for demanding applications. This device is part of Microchip's extensive range of radiation-hardened products, tailored to meet the stringent requirements of aerospace, defense, and high-reliability industries.

Key Features

  • High Radiation Tolerance: The JANS2N7372 is engineered to withstand the harsh environments of space and military applications, offering a significant radiation tolerance level.
  • Durable Construction: Built with robust materials, this Power MOSFET ensures long-term reliability and performance under extreme conditions.
  • Efficient Power Management: With its power-efficient design, the JANS2N7372 is ideal for systems where power conservation is paramount, helping to extend the mission life of satellite and space vehicles.
  • High Temperature Operation: The device is capable of operating effectively over a wide temperature range, making it suitable for various challenging environments.

Applications

The JANS2N7372 is versatile and can be used in a range of applications, including:

  • Space Systems: Satellites, launch vehicles, and other space-bound equipment that require reliable power switching and distribution.
  • Defense Systems: High-reliability military hardware such as avionics, radar systems, and communication equipment.
  • Nuclear Facilities: Power systems within nuclear environments where radiation levels can be detrimental to standard electronic components.

Technical Specifications

The JANS2N7372 offers a set of specifications that make it a top choice for high-reliability applications:

  • Drain-Source Voltage (Vds): [Insert specific voltage]
  • Continuous Drain Current (Id): [Insert specific current]
  • Power Dissipation (Pd): [Insert specific power dissipation]
  • Operating Temperature Range: [Insert specific temperature range]

Microchip Technology's commitment to quality ensures that the JANS2N7372 Power MOSFET not only meets but exceeds the performance requirements of the most demanding applications. When your project calls for a component that can deliver power, efficiency, and reliability, the JANS2N7372 is an exceptional choice.

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