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MSCSM170HM12CAG

Part No MSCSM170HM12CAG
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description PM-MOSFET-SIC-SBD-SP6C / Mosfet Array 4 N-Channel (Full Bridge) 1700V (1.7kV) 179A (Tc) 843W (Tc) Chassis Mount
Datasheet
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Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Microchip Technology
Package Bulk
FET Type 4 N-Channel (Full Bridge)
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C 179A (Tc)
Rds On (Max) @ Id, Vgs 15mOhm @ 90A, 20V
Vgs(th) (Max) @ Id 3.2V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 534nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 1000V
Power - Max 843W (Tc)
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Base Product Number MSCSM170
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 150-MSCSM170HM12CAG
Standard Package 1
Win Source Part Number 1053482-MSCSM170HM12CAG
Ultra Librarian 3D Model Ultra Librarian MSCSM170HM12CAG CAD Model

Description

Microchip Technology MSCSM170HM12CAG SiC Power Module

The MSCSM170HM12CAG from Microchip Technology is a state-of-the-art silicon carbide (SiC) power module designed to offer exceptional efficiency, reliability, and performance in high-power applications. This module is part of Microchip's extensive portfolio of power management solutions, tailored to meet the demanding requirements of modern electronic systems.

At the heart of the MSCSM170HM12CAG module is Microchip's innovative SiC technology, which provides significant advantages over traditional silicon-based devices. The SiC material offers higher thermal conductivity, faster switching speeds, and greater energy efficiency, which translates into improved power density and lower system costs.

The module features a half-bridge topology with a 1200V blocking voltage and a continuous current rating of 170A. This robust design makes it suitable for a wide range of applications, including electric vehicles (EVs), renewable energy systems, motor drives, and power supply units. Its high-frequency operation capabilities enable smaller passive components, resulting in more compact and lighter systems.

Engineered for reliability, the MSCSM170HM12CAG incorporates advanced packaging technology that enhances thermal management and minimizes parasitic inductances, leading to superior performance under harsh operating conditions. Its low on-resistance and reduced switching losses ensure high-efficiency power conversion, which is critical for energy-sensitive applications.

For ease of integration, the module comes in an industry-standard package that simplifies the design-in process and accelerates time-to-market. It is also equipped with built-in NTC thermistors for temperature monitoring, providing an additional layer of protection and enabling more effective thermal management strategies.

Microchip Technology's commitment to quality and reliability is evident in the MSCSM170HM12CAG module, which undergoes rigorous testing and quality control measures to ensure it meets the highest standards. With its combination of cutting-edge SiC technology and robust construction, this power module is an excellent choice for designers looking to enhance the performance and efficiency of their high-power electronic systems.

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