The TP2535N3-G from Microchip Technology is a robust, high-performance power MOSFET transistor designed for a variety of applications. This N-channel enhancement-mode transistor is known for its efficiency and reliability, making it an ideal choice for engineers and designers looking to develop power management solutions for their electronic devices.

Key Features

• High Current Capability: The TP2535N3-G is capable of handling continuous drain currents up to 110A, making it suitable for high-power applications.
• Low RDS(on): With an on-resistance as low as 3.3 milliohms, this MOSFET ensures minimal power loss and improved efficiency in electronic circuits.
• High Thermal Performance: Thanks to its TO-220 package, the TP2535N3-G offers excellent thermal characteristics that help maintain stability and performance even under high temperature conditions.
• Voltage Rating: This device can withstand drain-to-source voltages of up to 30V, providing a good margin for a variety of electronic designs.

Applications

The TP2535N3-G is versatile and can be used in a wide range of applications, including:

• Switch Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Drives
• Battery Management Systems
• Power Inverters
• Automotive Electronics
• LED Lighting Systems

Quality and Reliability

Microchip Technology is committed to providing high-quality products that meet stringent industry standards. The TP2535N3-G is no exception, offering reliability and performance that engineers can trust. With features like its robust package design and high current capability, this MOSFET is engineered to last in the most demanding environments.

Environmental Compliance

The TP2535N3-G is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it meets global environmental standards and is free from harmful substances such as lead, mercury, and cadmium.