The VN0106N3-G is a high-performance N-channel enhancement-mode Field-Effect Transistor (MOSFET) produced by Microchip Technology, a leader in microcontroller, mixed-signal, analog, and Flash-IP solutions. This MOSFET is designed to offer efficient power management and signal processing in a variety of applications.

Key Features

• Device Type: N-Channel
• Configuration: Single
• Drain-to-Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 0.22A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 220mA, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: Not Specified
• Input Capacitance (Ciss) (Max) @ Vds: Not Specified
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-92-3

Applications

The VN0106N3-G MOSFET is versatile and can be used in a wide range of applications. It is particularly well-suited for:

• Power supply circuits
• DC/DC converters
• Motor control systems
• Battery management
• Switching applications
• Load switch circuits

Quality and Reliability

Microchip Technology is committed to providing high-quality products that meet the rigorous demands of the electronics industry. The VN0106N3-G MOSFET is no exception and is designed to ensure long-term reliability and performance under a wide range of environmental conditions.

Environmental Compliance

The VN0106N3-G is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is manufactured with attention to environmental concerns and is free from many harmful substances commonly used in electronic components.